Influence of sulfide treatment of profiled-interface Au-GaAs Schottky diodes on the polariton peak of the photoresponse |
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| Authors: | M L Dmitruk O I Maeva S V Mamykin O B Yastrubchak |
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| Affiliation: | (1) Institute of Semiconductor Physics, Academy of Sciences of Ukraine, Kiev |
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| Abstract: | We discuss the feasibility of controlling the photosensitivity of metal/thin intrinsic-oxide/semiconductor surface-barrier
structures under conditions of excitation of surface polaritons. These structures may be used as polarization-sensitive photodetectors.
Pis’ma Zh. Tekh. Fiz. 23, 52–57 (May 12, 1997) |
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