Self-aligned GaAs gate heterojunction SISFET |
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| Authors: | Chen M Schaff WJ Tasker PJ Eastman LF |
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| Affiliation: | Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Phillips Hall, Ithaca, USA; |
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| Abstract: | A self-aligned GaAs gate heterojunction enhancement-mode SISFET with a layer structure of n+-GaAs/undoped Al0.5Ga0.5As/undoped GaAs is fabricated and shows a high transconductance and a low threshold voltage. The highest transconductance at both room temperature and at 77 K ever reported on a long-channel GaAs gate SISFET, 197 mS/mm and 313 mS/mm, respectively, is obtained. |
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