用AES/XPS对异质结材料的研究

用俄歇电子能谱（ＡＥＳ）和ｘ射线光电子能谱（ＸＰＳ）结合氩离子溅射深度剖析对一系列不同ｘ值的ＡｌｘＧａ１－ｘＡｓ／ＧａＡｓ异质结材料中各主元素的分布及化学状态和相对含量的变化进行了分析，发现Ａｌ向表面偏析的现象及Ａｓ和Ａｌ的择优溅射问题，并对此进行了讨论。同时用ＸＰＳ法进行了Ａｌ的定量分析，并与光致发光法（ＰＬ）测得的ｘ值进行了对比，发现二者有非常好的线性关系

Study on Heterojunction Material by AES/XPS

A series of AlxGa1-xAs/GaAs heterojunction materials,which have different x value,have been studied by x ray photoelectron spectroscopy(XPS) combined with argon ion soputtering profile.After a definite time for ion sputtering,XPS analyses were carried out to investigate chemical states and relative contents of Al,Ga and As.The result shows that aluminum segregated on surface and arsenic preferentially sputtered,and these reasons were discussed in this paper.Quantitative analyses were carried out to determine Al content using XPS.And x value was obtained by this method,and compared with x value measured by photoluminescence(PL)method.It shows a good linear relationship between XPS method and PL method.