Fabrication and Electrical Properties of Lead Zirconate Titanate Thick Films |
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| Authors: | H Daniel Chen K R Udayakumar Christopher J Gaskey L Eric Cross Jonathan J Bernstein Lance C Niles |
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| Affiliation: | Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802;The Charles Stark Draper Laboratory, Cambridge, Massachusetts 02139 |
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| Abstract: | Thick films of lead zirconate titanate of the morphotropic phase boundary composition, Pb(Zr0.52Ti0.48)O3, have been fabricated on platinum-buffered silicon using a modified sol–gel spin-coating technique. Crack-free films of 12-μm thickness can be uniformly deposited on 3-in.-diameter wafers with high yield and properties comparable to those of bulk ceramics. The thickness dependence of film structure and the dielectric, ferroelectric, and piezoelectric properties have been characterized over the thickness range of 1–12 μm. A strong (100) texture develops as film thickness increases above 5 μm; the films were marked by saturation values of longitudinal piezoelectric coefficient d 33, 340 pC/N; remanent polarization, 27 μC/cm2; and dielectric permittivity, 1450. PZT films in this thickness range are extremely well-suited to application as electromechanical transduction media in silicon-based microelectromechanical systems (MEMS). |
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