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Growth-Temperature Dependence of Magnetic and Magneto-Transport Properties of Epitaxially Grown MnAs/GaAs Hybrid Multilayers
Authors:J H Song  J J Lee  Y Cui  J B Ketterson and S Cho
Affiliation:(1) Department of Physics and Astronomy and Material Research Center, Northwestern University, Evanston, Illinois, 60208;(2) Department of Physics, University of Ulsan, Ulsan, 680-749, South Korea
Abstract:We successfully fabricated epitaxial MnAs/GaAs multilayers with a total thickness of 300 nm using molecular beam epitaxy. The periodicity of the samples was fixed at 5 nm/5 nm and the growth-temperature dependence of the magnetic and magneto-transport properties were studied. All samples studied exhibited ferromagnetism above room temperature. The magnetic anisotropy and magnetoresistance are strongly dependent on the growth temperature. These results indicate that it is possible to manipulate the magnetic and magneto-transport properties by changing the growth temperature.
Keywords:ferromagnetic semiconductor  spintronics  magnetic multilayer  magnetoresistance
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