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Oxygen partial pressure dependence of memory effect of sputtered nc-Al/α-Al2O3 thin films |
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| Authors: | Yibin Li Yue Sun Wenzhu Zhang Yujie Ding Xiaodong He |
| Affiliation: | aCenter for Composite Materials, School of Astronautics, Harbin Institute of Technology, P.O. Box 3010, Harbin 150001, PR China;bSchool of Electrical Engineering, Heilongjiang University, Harbin 150080, PR China;cCollege of Electrical and Information Engineering, Heilongjiang Institute of Science and Technology, Harbin 150027, PR China |
| Abstract: | Nanocrystalline aluminum embedded in amorphous dielectric alumina matrix thin films (nc-Al/α-Al2O3) was synthesized via reactive magnetron sputtering. The nc-Al/α-Al2O3 films at different oxygen partial pressures were sputtered on p-type Si substrates from a pure Al target in the mixed ambient of Ar and O2. Both deposition rate and aluminum concentration increase as the oxygen partial pressure decreases. X-ray photoelectron spectroscopy and high-resolution transmission electron microscope studies give the confirmation of nanocrystalline Al embedded in amorphous Al2O3 matrix. This nanocomposite thin film exhibits memory effect as a result of charge trapping. The flat band voltage value depends on the Al nanocrystal concentration which is related to oxygen partial pressure. |
| Keywords: | nc-Al/Al2O3 Memory effect Oxygen partial pressure Magnetron sputtering |
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