Comment on “Negative Schottky barrier between titanium and n-type Si(0 0 1) for low-resistance ohmic contacts”

It is shown in this letter that recently published statements Solid-State Electron 2004;48(2):335] on negative Schottky barrier height between titanium and n-type Si(0 0 1) are not satisfactorily experimentally approved and may not be true. The rectification effect of the Schottky barrier is overshadowed by high series resistance which influences I–V characteristic already in reverse bias and disables to extract true Schottky barrier height from the characteristics in the bias range studied. On the basis of published data it is probably not possible to speak about negative Schottky barrier height.