SiC thin films obtained by Si carbonization

This work reports the fabrication and characterization of SiC thin films obtained by carbonization of Si substrates with a recently designed and fabricated hot-wall reactor by rapid thermal chemical vapor deposition. The reactor design is less complex than other ones previously reported, but it permits to reach a similar SiC material crystalline quality. The composition and structure of the fabricated thin films have been assessed by scanning electron microscopy and transmission electron microscopy. The structural quality of the obtained films has been optimized as a function of the temperature ramp rate, flowing gases, Si surface pre-treatment and sample holder design. SiC obtained layers on Si exhibit a flat free surface, they mainly consist of highly oriented 3C-SiC and some hexagonal SiC inclusions have been detected.