| 双离子束溅射制备非晶SiOxNy薄膜的强黄光发射 |
| |
| 引用本文： | 瞿发俊,徐华,吴雪梅,诸葛兰剑.双离子束溅射制备非晶SiOxNy薄膜的强黄光发射[J].功能材料,2006,37(3):492-495. |
| |
| 作者姓名： | 瞿发俊 徐华 吴雪梅 诸葛兰剑 |
| |
| 作者单位： | 1. 苏州大学,物理系,江苏,苏州,215006;中国科学院上海微系统与信息技术研究所,离子束重点实验室,上海,200050
2. 苏州大学,分析测试中心,江苏,苏州,215006 |
| |
| 基金项目： | Projet supported by National Nature Science Foundation of China（10275047） |
| |
| 摘 要： | 用双离子束溅射法制备了SiOxNy薄膜,并对薄膜的结构和光致发光(PL)性质进行了研究.XRD和TEM的实验结果表明薄膜是非晶结构;用XPS对样品进行了表征,在397.8eV位置处出现一个对应于N1s的对称峰,表明样品中的N原子主要与Si原子结合,FTIR的实验结果也说明了这一点.光吸收测量结果显示SiOxNy薄膜的光学带隙比Si-SiO2薄膜宽.在225nm波长的激发下,测得在590nm处有强的黄光发射,并利用能带模型讨论了可能的发光机制.
|
| 关 键 词： | 硅氮氧薄膜 光学带隙 光致发光(PL) silicon oxinitride film optical band gap photoluminescence(PL) |
| 文章编号： | 1001-9731(2006)03-0492-04 |
| 收稿时间： | 2005-04-06 |
| 修稿时间： | 2005-06-02 |
Origin of intense yellow-light emission from amorphous silicon oxynitride thin films prepared by dual ion beam sputtering |
| |
| QU Fa-jun,XU Hua,WU Xue-mei,ZHUGE Lan-jian.Origin of intense yellow-light emission from amorphous silicon oxynitride thin films prepared by dual ion beam sputtering[J].Journal of Functional Materials,2006,37(3):492-495. |
| |
| Authors: | QU Fa-jun XU Hua WU Xue-mei ZHUGE Lan-jian |
| |
| Affiliation: | 1. Department of Physics, Suzhou University, Suzhou 215006,China; 2. Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science,Shanghai 200050, China; 3. Testing and Analysis Centre, Suzhou University, Suzhou 215006, China |
| |
| Abstract: | In this work,results of the study on the structure and photoluminescence(PL) properties of Si OxNythin fil ms arepresented.The fil ms were deposited at roomtemperature using a dual ion beamco-sputtering system.The XRD and TEMre-sults showthat the depositedfil ms have an amorphous structure.Inthe XPSresult,we find N1s spectrumconsists of a symmet-ric single peak at 397.8eV,whichindicates that the nitrogen atoms are mainly bonded to silicon.It is in agreement with the re-sult of FTIR.Fromthe optical absorption measurement,we find that the optical band gap of Si OxNythin fil mis widened com-pared with that of Si-Si O2thin fil m.In Si OxNyfil ms,anintense single PL peak at 590nm produced by 225nmexcitation is ob-served.The PL peak of 590nmis proposed to originate from N-related defects after the discussion on our experi ment results. |
| |
| Keywords: | silicon oxinitride film optical band gap photoluminescence(PL) |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
