| 退火对Fe（200nm）／Si系统中硅化物的形成和微结构的影响 |
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| 引用本文： | 王衍,张晋敏,马道京,朱培强,陈站,谢泉.退火对Fe（200nm）／Si系统中硅化物的形成和微结构的影响[J].纳米科技,2010(1):25-28,33. |
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| 作者姓名： | 王衍 张晋敏 马道京 朱培强 陈站 谢泉 |
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| 作者单位： | 贵州大学理学院新型光电子材料与技术研究所,贵州贵阳550025 |
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| 基金项目： | 贵州省自然科学基金项目(黔科合J字[2008]2002号);;贵州省科技厅国际合作项目(黔科合外G字(2009)700113号);;贵阳市科技局大学生创业科技项目(筑科计(2007)6-3号,筑科计(2007)6-1号);;贵州大学研究生创新基金项目(校研理工2009011) |
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| 摘 要： | 采用直流磁控溅射方法，在Si（100）衬底上沉积厚约200nm纯金属Fe膜，随后在真空退火炉中不同退火条件下对样品进行热处理，形成Fe—Si化合物薄膜，利用X-射线衍射（XRD）和扫描电子显微镜（SEM）对Fe—Si化合物进行表征分析，研究了退火条件对厚膜系统中Fe—Si化合物薄膜的形成、晶体结构和表面形貌的影响。
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| 关 键 词： | 磁控溅射 厚膜系统 真空退火 Fe—Si化合物 |
Influences of Annealing on the Formation and the Microstructures of Silicides in the System of 200 nm Fe on Si |
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| Authors: | WANG Yan ZHANG Jin-min MA Dao-jing ZHU Pei-qiang CHEN Zhan XIE Quan |
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| Affiliation: | College of Science/a>;Institute of Advanced Optoelectronic Materials and Technology/a>;Guizhou University/a>;Guiyang 550025/a>;China |
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| Abstract: | Pure metal Fe films about 200 nm were deposited on Si (100) substrates by DC magnetron sputtering,subsequent thermal treatments were performed and the Fe-Si compounds were formed in a vacuum furnace in various annealing conditions. The formation of the Fe-Si compounds and their crystal structure were analyzed by X-ray diffraction (XRD) and the microstructures of the film were characterized by scanning electron microscope (SEM). The effects of annealing condition on crystal formation and structures of Fe-Si ... |
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| Keywords: | Magnetron sputtering Thick film system Vacuum Annealing Fe-Si compound |
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