Band structure,magneto-transport,and magneto-optical properties of lnAs-Ga1-xlnxSb superlattices

We have theoretically and experimentally investigated the electronic properties of InAs-Ga_1-xIn_xSb superlattices. It is found that a strong repulsion between the El and HI bands in superlattices with thin Ga_1-xIn_xSb layers leads to dispersion relations that closely resemble those in HgTe-CdTe superlattices. Temperature-dependent magneto-transport and magneto-optical measurements on samples with a range of InAs layer thicknesses confirm several of the theoretically predicted consequences, e.g., the coexistence of two electron species in semimetallic superlattices and a very light electron cyctron mass in narrow-gap semiconducting samples. The electron mobility is found to be dominated by interface roughness scattering under nearly all conditions of interest. Implications for this system as an infrared detector material are discussed.