Magneto-electrical transport in V-patterned La0.7Sr0.3MnO3 nanostructures |
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Authors: | LE Calvet G AgnusY Vaheb YC LauV Pillard Ph Lecoeur |
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Affiliation: | Institut d'Electronique Fondamentale, Université Paris-Sud, 91405 Orsay, France UMR 8622 CNRS, 91405 Orsay, France UMR 8622 CNRS, 91405 Orsay, France |
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Abstract: | We investigate the electrical transport and magnetic field dependence of nano-patterned La0.7Sr0.3MnO3 devices. We find that the resistivity versus temperature dependence is the same as that observed in thin films, indicating that our nano-patterning preserves the fundamental properties of the material. At temperatures below 20 K there is resistivity upturn of ~ 5 % in the smallest and thinnest device. Structures in a “V” pattern were fabricated in order to investigate domain wall resistance. We find a much smaller resistance area product as compared to previous reports observed in nanoconstrictions and also that the switching field matches that in micromagnetic simulations. |
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Keywords: | Half metallic manganites Domain walls Magneto-resistance |
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