Pulsed laser deposition of epitaxial ferroelectric Pb(Zr,Ti)O<sub>3</sub> films on silicon substrates期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Pulsed laser deposition of epitaxial ferroelectric Pb(Zr,Ti)O₃ films on silicon substrates

Authors:	AS Borowiak G NiuV Pillard G AgnusPh Lecoeur D AlbertiniN Baboux B GautierB Vilquin

Affiliation:	^a Université de Lyon, INSA de Lyon, Institut des Nanotechnologies de Lyon, 20, avenue Albert Einstein, 69621 Villeurbanne, France ^b Université de Lyon, Ecole Centrale de Lyon, Institut des Nanotechnologies de Lyon, 36 avenue Guy de Collongue, 69134 Ecully Cedex, France ^c Université Paris-Sud, Institut d'Electronique Fondamentale, Bât. 220, 91405 Orsay Cedex, France

Abstract:	We report on the epitaxial growth and electrical properties of Pb_0.52Zr_0.48TiO₃ (PZT) thin films deposited by Pulsed Laser Deposition (PLD) on SrTiO₃ (STO)-buffered Si(001). Previously to PZT growth, 40 nm-thick (La,Sr)MnO₃ (LSMO) layer was deposited to serve as electrical bottom electrode. The 200 nm-thick PZT film epitaxy was optimized by PLD on STO-buffered Si(001).The high contrast of stable artificially poled ferroelectric surfaces evidences the good ferroelectric properties of the PZT thin film. The structural as well as the physical properties of the PZT/LSMO/STO/Si(001) structure prove that very good quality layers have been obtained for films grown on silicon substrate.

Keywords:	Molecular beam epitaxy Pulsed laser deposition Pb(Zr Ti)O₃ Ferroelectric oxides Thin film Piezo Force Microscopy Silicon
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