Novel properties of a 0.1-μm-long split-gate MODFET |
| |
| Authors: | Ismail K. Lee K.Y. Kern D.P. Hong J.M. |
| |
| Affiliation: | IBM Thomas J. Watson Res. Center, Yorktown Heights, NY; |
| |
| Abstract: | A MODFET with two 30-nm-long gates (separated by 40 nm) has been fabricated using ultrahigh-resolution electron-beam lithography. The proximity of the two gate fingers along with the ability to independently bias them results in the following features: (a) tunability of the threshold voltage, (b) enhancement of the transconductance, especially at low current levels, (c) reduction in short-channel effects, and (d) high-voltage gain and cutoff frequency |
| |
| Keywords: | |
|
|
