| LDD注入工艺对40 nm 中压NMOS器件HCI-GIDL效应的优化 |
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| 引用本文： | 闫翼辰,蔡小五,魏兰英,蔡巧明,曹杨,杜林.LDD注入工艺对40 nm 中压NMOS器件HCI-GIDL效应的优化[J].微电子学,2020,50(5):738-742. |
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| 作者姓名： | 闫翼辰 蔡小五 魏兰英 蔡巧明 曹杨 杜林 |
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| 作者单位： | 中国科学院大学, 北京 100049;中芯国际集成电路制造有限公司北京, 北京 100176 ;安徽继远检验检测技术有限公司, 合肥 230088 |
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| 基金项目： | 国家重点研究发展计划项目(2016YFB0901804) |
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| 摘 要： | 基于40 nm CMOS工艺,研究了8 V MV NMOS器件的HCI-GIDL效应的优化。分析了增大LDD注入倾角、二次LDD注入由P注入变为As注入两种措施对电学特性的影响。测试结果表明,两种措施均对器件的衬底电流、关态泄漏电流产生较好效果。利用TCAD工具,模拟了LDD注入工艺的优化对掺杂形貌、电场分布和碰撞电离强度的影响。分析了HCI-GIDL效应得以优化的物理机制。
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| 关 键 词： | HCI-GIDL效应 NMOS器件 LDD注入 |
| 收稿时间： | 2019/10/20 0:00:00 |
Optimization of 40 nm MV NMOS Device with LDD Injection Process for HCI-GIDL Effects |
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| YAN Yichen,CAI Xiaowu,WEI Lanying,CAI Qiaoming,CAO Yang,DU Lin.Optimization of 40 nm MV NMOS Device with LDD Injection Process for HCI-GIDL Effects[J].Microelectronics,2020,50(5):738-742. |
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| Authors: | YAN Yichen CAI Xiaowu WEI Lanying CAI Qiaoming CAO Yang DU Lin |
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| Affiliation: | Univ.of Chinese Academy of Sciences, Beijing 100049, P.R.China;SMIC Integr.Circ.Manufact.Co., Ltd.Beijing, Beijing 100176, P.R.China; Anhui Jiyuan Inspection and Testing Technol.Co., Ltd., Hefei 230088, P.R.China |
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| Abstract: | The balance optimization of HCI-GIDL effects of 8 V MV NMOS devices based on 40 nm CMOS technology were studied. The influence of increasing LDD injection tilt angle and changing the second-step LDD injection atom from P to As on the electrical characteristics of the device were analyzed. The test results showed that both measures had good effect on the substrate current and off-state leakage current. The effects of LDD injection process optimization on doping profile, electric field distribution and impact ionization intensity were simulated with TCAD tool. The physical mechanism of optimization of the HCI-GIDL effects were analyzed. |
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