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一种低功耗低延迟的容忍DNU锁存器设计
引用本文:国欣祯,杨潇,郭阳.一种低功耗低延迟的容忍DNU锁存器设计[J].微电子学,2021,51(2):203-210.
作者姓名:国欣祯  杨潇  郭阳
作者单位:合肥工业大学 电子科学与应用物理学院, 合肥 230009
基金项目:国家自然科学基金资助项目(61904047)
摘    要:随着集成电路器件特征尺寸的进一步减小,锁存器内部节点之间的距离越来越短.由于内部节点间的电荷共享效应,器件在空间辐射环境中频繁发生单粒子翻转(SEU),受影响节点由单节点扩展到双节点.文章提出了一种新型的锁存器加固结构,利用C单元固有的保持属性,实现对单节点翻转(SNU)和双节点翻转(DNU)的完全容忍.HSPICE仿...

关 键 词:单粒子翻转  低功耗  低延迟  双节点翻转
收稿时间:2020/6/20 0:00:00

Design of a Low Power and Low Delay DNU-Tolerant Latch
GUO Xinzhen,YANG Xiao,GUO Yang.Design of a Low Power and Low Delay DNU-Tolerant Latch[J].Microelectronics,2021,51(2):203-210.
Authors:GUO Xinzhen  YANG Xiao  GUO Yang
Affiliation:School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, P. R. China
Abstract:As the feature size of the integrated circuit devices is reduced further, the distance among the internal nodes of the latch becomes shorter and shorter. Due to the charge sharing effect among internal nodes, single event upset (SEU) affected nodes that frequently occurred in the space radiation environment have expanded from single nodes to double nodes. A new hardened latch structure which used the inherent hold property of the C-element was proposed in this paper. A complete tolerance to single node upset (SNU) and double node upset (DNU) was realized. HSPICE simulation results showed that, compared with other similar hardened designs, the power consumption of the proposed latch had decreased by 34.86% on average, the delay had decreased by 59% on average, and the power delay product had decreased by 67.91% on average. PVT analysis showed that the proposed latch structure was not sensitive to the changes in voltage, temperature and manufacturing processes.
Keywords:
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