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金丝球焊复合键合工艺可靠性研究
引用本文:燕子鹏,赵光辉,谢廷明,周成彬. 金丝球焊复合键合工艺可靠性研究[J]. 微电子学, 2021, 51(1): 142-145
作者姓名:燕子鹏  赵光辉  谢廷明  周成彬
作者单位:中国电子科技集团公司 第二十四研究所, 重庆 400060
基金项目:模拟集成电路国家重点实验室基金资助项目(614280204030317)
摘    要:对芯片铝焊盘上不同重叠面积的金丝球焊复合键合的可靠性进行研究,并与非复合键合进行对比.结果 表明,随着复合键合重叠面积的减少,键合拉力和界面生成的合金化合物面积均无明显变化,而剪切强度呈下降趋势.高温储存结果表明,复合键合拉力值满足国军标要求.复合键合有掉铝和弹坑缺陷隐患.经分析,原因是复合键合时施加的超声能量破坏了硅...

关 键 词:混合集成电路  金丝键合  复合键合  合金化合物
收稿时间:2020-02-21

Study on the Reliability of Au Wire Ball Compound Bond
YAN Zipeng,ZHAO Guanghui,XIE Tingming,ZHOU Chengbin. Study on the Reliability of Au Wire Ball Compound Bond[J]. Microelectronics, 2021, 51(1): 142-145
Authors:YAN Zipeng  ZHAO Guanghui  XIE Tingming  ZHOU Chengbin
Affiliation:The 24th Research Institute of China Electronics Technology Group Corporation, Chongqing 400060, P. R. China
Abstract:The reliability of Au wire ball compound bond to aluminum pads with different overlapped areas, as well as non-compound ball bond, was comparatively investigated. The results demonstrated that the wire pull force and the intermetallic compounds coverage formed at the interface showed no obvious variation, while the shear strength reduced, along with the decrease of the compound bond overlapped area. The high temperature storage results showed that the wire pull force of compound bond met the GJB2438 reliability requirement. However, there was an increased tendency of lifting metallization and crater in the compound bond, in that the ultrasonic energy destroyed the connection between the silicon substrate and the metallization above it, and then forming microcrack at the interface. As a result, the compound bond parameters should be optimized and sufficiently verified before use, especially in the application of high reliable circuits.
Keywords:hybrid integrated circuit (HIC)   Au wire bonding   compound bond   intermetallic compound (IMC)
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