22 nm FD-SOI静态随机存储器的可靠性研究

针对22 nm FD-SOI CMOS工艺静态随机存储器(SRAM),研究了工艺角、工作电压、测试温度、总剂量效应对器件性能的影响.通过自动测试设备(ATE),有效地提取了FD-SOI存储器在多种测试环境下的电学性能参数.测试结果表明,不同的工艺角对输出电平和工作状态的影响较小.随着电压的增加,静态电流随之增加,最大工...

Reliability Study of 22 nm FD-SOI Static Random Access Memory

For the 22 nm FD-SOI static-random-access-memory(SRAM), the effects of the process corner, voltage, temperature, and total dose on the performance of memories were studied. Under various conditions, the electrical parameters of the devices were extracted by the automatic-test-equipment. The test results showed that the process corners had less impact on the devices. When the voltage increased, the standby current increased, and the maximum operating frequency fluctuated. The device was stable within the range of-55 ℃~125 ℃. The high frequency performance was best at 25 ℃, and the low voltage performance was best at high temperature. When the total dose accumulated to 3 kGy(Si), the device function was still normal, and the core current and I/O current increased significantly. FD-SOI SRAM had many advantages, good working stability, and had excellent application prospect.