| 一种抗总剂量辐照的新型PD SOI器件 |
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| 引用本文： | 李孟窈,刘云涛,蒋忠林.一种抗总剂量辐照的新型PD SOI器件[J].微电子学,2021,51(1):101-105. |
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| 作者姓名： | 李孟窈 刘云涛 蒋忠林 |
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| 作者单位： | 哈尔滨工程大学 信息与通信工程学院, 哈尔滨 150001 |
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| 基金项目： | 黑龙江省自然科学基金资助项目(JJ2018ZR1021) |
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| 摘 要： | 提出了一种具有叠层埋氧层的新栅型绝缘体上硅(SOI)器件.针对SOI器件的抗总电离剂量(TID)加固方案,对绝缘埋氧层(BOX)采用了叠层埋氧方案,对浅沟槽隔离(STI)层采用了特殊S栅方案.利用Sentaurus TCAD软件,采用Insulator Fixed Charge模型设置固定电荷密度,基于0.18 μm ...
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| 关 键 词： | STI PD SOI NMOS 总剂量辐照 S栅体接触 kink效应 |
| 收稿时间： | 2020/3/6 0:00:00 |
A PD SOI Device for Anti-Total Dose Irradiation |
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| LI Mengyao,LIU Yuntao,JIANG Zhonglin.A PD SOI Device for Anti-Total Dose Irradiation[J].Microelectronics,2021,51(1):101-105. |
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| Authors: | LI Mengyao LIU Yuntao JIANG Zhonglin |
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| Affiliation: | The School of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, P. R. China |
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| Abstract: | A new gate type silicon on insulator(SOI) device with a laminated embedded oxygen layer was proposed. In the anti-total ionization dose(TID) reinforcement scheme for SOI devices, the buried oxygen scheme for buried oxide(BOX), and the special S-gate scheme for STI layer were adopted. Based on Sentaurus TCAD software and Insulator Fixed Charge model, the fixed charge density was set. Base on a 0.18 μm CMOS process, the TID effect simulation of the PD SOI NMOS was proposed, and three kinds of PD SOI NMOS simulation models of strip-gate, H-gate and S-gate was established. By comparing the transfer characteristic curves, the threshold voltage drift and the transconductance degradation before and after irradiation of three devices, the anti-TID irradiation performance of the device were verified. The simulation results showed that the device with S-gate could resist kink effect, and anti-TID radiation dose of the PD SOI NMOS devices could reach 5 kGy. |
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| Keywords: | STI PD SOI NMOS total dose irradiation S-gate contact kink effect |
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