深亚微米CMOS管总剂量辐照特性的对比研究

对深亚微米NMOS和PMOS管进行了⁶⁰Coγ总剂量辐射实验。实验结果表明,PMOS管在转移特性、噪声、匹配特性方面比NMOS管的抗辐照能力更强。对NMOS管和PMOS管的辐照损伤机理进行了理论分析。分析结果表明,不同的衬底类型导致了PMOS管和NMOS管的辐照效应的差异。基于实验与分析结果,提出了一些深亚微米模拟IC的抗辐照设计方案。

Comparative Study on Total Dose Irradiation Characteristics of Deep Submicron CMOS Transistors

The 60Co γ total dose radiation experiments were carried out on deep submicron NMOS and PMOS transistors. The experimental results showed that PMOS transistors had better anti-irradiation capability than NMOS transistors in terms of transfer characteristics, noise and matching characteristics. The radiation damage mechanism of NMOS transistors and PMOS transistors were analyzed theoretically. The results showed that different substrate types lead to different radiation effects of PMOS transistors and NMOS transistors. Based on the experimental and analytical results, some anti-radiation design schemes for deep submicron IC simulation were proposed.