| 离子敏感场效应晶体管传感器研究进展 |
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| 引用本文： | 张双,张静,张青竹,魏千惠,魏淑华,王艳蓉,张兆浩,熊恩毅,方敏,闫江,屠海令. 离子敏感场效应晶体管传感器研究进展[J]. 微电子学, 2020, 50(6): 860-867 |
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| 作者姓名： | 张双 张静 张青竹 魏千惠 魏淑华 王艳蓉 张兆浩 熊恩毅 方敏 闫江 屠海令 |
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| 作者单位： | 北方工业大学 信息学院, 北京 100144;中国科学院微电子研究所 先导工艺研发中心, 北京 100029;中国科学院大学, 北京 100049;有研工程技术研究院有限公司 智能传感器功能材料国家重点实验室, 北京 100088 |
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| 基金项目： | 中国科学院青年促进会基金资助项目(Y9YQ01R004)；中国科学院微电子器件与集成技术重点实验室课题基金资助项目(E0YS01X001) |
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| 摘 要： | 近年来,离子敏感场效应晶体管(ISFET)生物传感器因其灵敏度高、速度快、无标记、体积小、成本低等特点而受到了广泛关注,可应用于DNA、蛋白质、酶、细胞、离子等生物识别物的检测。ISFET生物传感器在金属氧化物半导体场效应晶体管(MOSFET)的基础上发展而来,通过溶液和传感层之间产生电荷转移,形成界面电位,从而改变FET的电流。综述了基于ISFET的生物传感器的工作原理,对器件类型进行了分类,分析了各种器件结构的特性,并列举了最新的应用进展,对未来实现高性能、微型化、可量产的ISFET生物传感器具有重要作用。
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| 关 键 词： | 离子敏感场效应晶体管 生物传感器 传感层 电荷转移 界面电位 |
| 收稿时间： | 2020-08-04 |
Research Advancement in Ion-Sensitive Field Effect Transistor Sensors |
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| ZHANG Shuang,ZHANG Jing,ZHANG Qingzhu,WEI Qianhui,WEI Shuhu,WANG Yanrong,ZHANG Zhaohao,XIONG Enyi,FANG Min,YAN Jiang,TU Hailing. Research Advancement in Ion-Sensitive Field Effect Transistor Sensors[J]. Microelectronics, 2020, 50(6): 860-867 |
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| Authors: | ZHANG Shuang ZHANG Jing ZHANG Qingzhu WEI Qianhui WEI Shuhu WANG Yanrong ZHANG Zhaohao XIONG Enyi FANG Min YAN Jiang TU Hailing |
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| Affiliation: | School of Information Science and Technology, North China University of Technology, Beijing 100144, P.R.China;Integrated Circuit Advanced Process Center ICAC, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P.R.China;University of Chinese Academy of Sciences, Beijing 100049, P.R.China;State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing 100088, P.R.China |
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| Abstract: | In recent years, ion-sensitive field-effect transistors(ISFET) biosensors received widespread attention because of their high sensitivity, fast speed, no labeling, small volume and low cost. It was applied for the detection of biometrics such as DNA, proteins, enzymes, cells, ions. ISFET biosensors were developed on the basis of metal oxide semiconductor field effect transistors (MOSFET), which has generated charge transfer between through solution and sensing lays to form interfacial potentials that alter FET currents. This paper reviewed the working principle of ISFET based biosensors, classifies device types, analyzed the characteristics of various device structures, and enumerated the latest application progress. It played an important role for realizing a high performance, miniaturization and mass production ISFET biosensor in the future. |
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| Keywords: | ion-sensitive field-effect transistor biosensor sensing layer charge transfer interface potential |
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