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一种高侧功率开关的输出短路保护电路
引用本文:梁怀天,方舟,罗攀,易子皓,甄少伟,乔明,张波.一种高侧功率开关的输出短路保护电路[J].微电子学,2021,51(1):10-15, 21.
作者姓名:梁怀天  方舟  罗攀  易子皓  甄少伟  乔明  张波
作者单位:电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054
基金项目:"十三五"装备预先研究项目(31513030209)
摘    要:提出了一种智能高侧功率开关的短路保护电路,包括输出短路检测电路、延时信号产生电路和栅源电压限制电路。采用NMOS管用作功率管,使电路短路时仍处于安全工作区内,提升了高侧功率开关的可靠性。采用0.6μm HV SOI工艺对该短路保护电路进行了仿真验证。仿真结果表明,在硬开关故障和负载短路两种情况下,功率管保持处于安全工作区内。

关 键 词:智能高侧功率开关  短路保护  安全工作区
收稿时间:2020/2/4 0:00:00

A Short-Circuit Protection Circuit Applied in High-Side Power Switch
LIANG Huaitian,FANG Zhou,LUO Pan,YI Zihao,ZHEN Shaowei,QIAO Ming,ZHANG Bo.A Short-Circuit Protection Circuit Applied in High-Side Power Switch[J].Microelectronics,2021,51(1):10-15, 21.
Authors:LIANG Huaitian  FANG Zhou  LUO Pan  YI Zihao  ZHEN Shaowei  QIAO Ming  ZHANG Bo
Affiliation:State Key Lab. of Elec. Thin Films and Inter. Dev., Univ. of Elec. Sci. and Technol. of China, Chengdu 610054, P. R. China
Abstract:A short-circuit protection circuit applied in intelligent high side power switch was presented. It included output short-circuit detecting circuit, delay signal generating circuit and gate-source voltage limiting circuit. NMOS transistors were used as the power transistors, so the circuit was still in the safe operating area when the circuit was short, and the reliability of high side power switch were improved. The short-circuit protection circuit was simulated in 0.6 μm HV SOI process. The simulation results showed that the power transistors were keeping in the safe operating area under the condition of hard switch fault and load short-circuit.
Keywords:intelligent high-side power switch  short-circuit protection  safe operating area
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