新型GaAs HEMT器件寄生电容的优化提取方法

针对优化提取参数的复杂度问题,提出了一种新的GaAs HEMT器件寄生电容的优化提取方法。提取寄生电容时,设置合适的优化范围,进行优化提参。采用三次参数优化,确保优化精度和模型准确性,避免了循环优化,提高了参数提取效率和参数优化效率。该方法不依赖器件的具体结构,减少了对器件结构假设所带来的误差。对17元件小信号等效电路模型参数进行提取,验证了该方法的可靠性。结果表明,S参数与实测S参数的拟合度较好,拟合的最高频率可达30 GHz。

An Optimized Parameter-Extraction Method for Parasitic Capacitance of GaAs HEMT Device

Aiming at the complexity of optimizing parameter-extraction, a new parameter-extraction method for parasitic capacitance of GaAs HEMT was proposed. When parasitic capacitance was extracted, an appropriate optimization range was set to carry out optimization reference. The three times parameter optimization was adopted to ensure the optimization accuracy and model accuracy, avoid the cycle optimization, and improve the efficiency of parameter-extraction and parameter-optimizing. This method was independent of the device structure, which reduced the error caused by the assumption of the device structure. The model parameters of 17-element small signal equivalent circuit were extracted, and the reliability of the method was verified. The results showed that the S parameter was fitting well with the measured one, and the highest fitting frequency could reach 30 GHz.