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Very low-noise HEMTs using a 0.2?m T-gate |
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| Authors: | Jones WL Ageno SK Sato TY |
| Affiliation: | TRW Electronic System Group, Redondo Beach, USA; |
| Abstract: | A very low-noise, high-electron-mobility transistor has been fabricated using a 0.2 ?m T-shaped gate. At 12 GHz, a noise figure of 0.61 dB with an associated gain of 12.58dB has recently been measured. This is the lowest noise figure ever reported for an HEMT at this frequency |
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