一种小型化高线性 GaN 功放器设计

采用ADS软件对一种高线性GaN功率放大器进行匹配电路设计，并制作了一款超小尺寸的高线性放大电路。该电路采用0.254 mm厚的Al2 O3陶瓷作为基板，放大晶体管选用无封装芯片，在5 mm ×6 mm的小尺寸范围内完成电路制作。制作的小尺寸高线性放大电路实现了在输入双音信号频率为4 G Hz和4.002 G Hz、输出总功率为2 W时，三阶互调抑制35 dBc ，功率附加效率35％。

Design of A Miniaturization GaN Power Amplifier with High Linearity

This paper uses ADS software to design a matching circuit for the GaN power amplifier with high linearity ,and makes an ultra-mini amplifying circuit with high linearity .The circuit uses Al2 O3 ceramic of 0 .254 mm thickness as basic board ,and the amplifying transistor selects the chip with no encapsulation ,then the circuit is fabricated in small size of only 5 mm × 6 mm .The fabrica-ted small amplifying circuit with high linearity realizes :third-order intermodulation rejection is 35 dBc and the power additional efficiency is 35% when the input two-tone signal frequencies are 4 GHz and 4 .002 GHz and the total output power is 2 W .