不同降温方式对单晶石墨烯氢气刻蚀的改善

以化学气相沉积（CVD）的方法在铜衬底上制备了大尺寸的单晶石墨烯。研究了在3种不同降温方式下，石墨烯受氢气刻蚀程度的变化，以及在降温过程中通入甲烷后，对刻蚀的影响与改善，并对刻蚀机理进行了探讨。结果表明：经开盖降温的石墨烯受刻蚀最轻，随炉降温的样品受刻蚀次之，缓慢降温的样品受刻蚀最为严重。在降温过程中通入甲烷之后，3种样品的刻蚀都得到了进一步的改善，且开盖降温样品的结晶质量有大幅提升；随炉降温样品的结晶质量有小幅提升；缓慢降温样品的结晶质量有所下降。

Reducing hydrogen etching of graphene by using different cooling method

Submillimeter single-crystal graphene on copper foils was synthesized by chemical vapor deposition. The influence of cooling rate on hydrogen etching of graphene has been studied by using three different types of cooling method. Methane has been introduced during the cooling process to reduce the etching effect and the etching mechanism has been discussed. The results show that fast cooling by just opening the furnace after graphene growth has the lowest etching effect,while the furnace cooling results in intermediate level of etching,and the slow cooling has the most serious etching. The etching damage reduced after methane is introduced during the cooling process. The crystal quality of open furnace cooling graphene was highly increased,while for the furnace cooling graphene it increased slightly,for the slow cooling graphene,the crystal quality decreased.