国内外碳化硅功率器件发展综述

对国内外碳化硅(Silicon Carbide,SiC)单晶衬底技术、外延片技术、功率器件性能特点进行了归纳分析,指出SiC功率器件产品在应用中面临的问题:SiC功率器件驱动技术和保护技术尚不成熟、电磁兼容问题未完全解决和应用的电路拓扑不够优化等.针对这些问题应从以下几个方面着手发展:降低单晶衬底和外延片材料成本、降低SiC器件在高温下的损耗和开发新的适合SiC功率器件的封装技术.

Overview of the Development of Silicon Carbide Power Devices at Home and Abroad

In this paper,the performance characteristics of silicon carbide single crystal substrate technology,epitaxial wafer technology,and power devices at home and abroad are summarized and analyzed,and the problems faced in the application of SiC power device products are pointed out:the driving technology and protection technology of SiC power device are still immature,the electromagnetic compatibility problems are not completely solved and the applied circuit topology is not optimized enough.In order to solve these problems,we should develop from the following aspects:reducing the material cost of single crystal substrates and epitaxial wafers,reducing the loss of silicon carbide devices at high temperatures,and developing new packaging technology suitable for SiC power device.