| 面向NAND Flash存储的纠错编码技术概述 |
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| 引用本文： | 彭福来,于治楼,陈乃阔,耿士华,毕研山.面向NAND Flash存储的纠错编码技术概述[J].计算机与现代化,2017,0(11):35. |
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| 作者姓名： | 彭福来 于治楼 陈乃阔 耿士华 毕研山 |
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| 摘 要： | 对面向NAND Flash存储的纠错编码技术进行综述。首先，介绍NAND Flash的内部结构及其出错机制。然后，对目前常用的4种纠错编码技术（Hamming码、RS码、BCH码以及LDPC码）原理及现状进行详细介绍。最后，对比分析这4种纠错编码技术的优缺点以及未来的发展趋势。
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| 关 键 词： | 纠错编码 NAND Flash存储 BCH码 LDPC码 |
| 收稿时间： | 2017-11-21 |
Overview on Error Correction Code Technologies for NAND Flash Memory |
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| PENG Fu-lai,YU Zhi-lou,CHEN Nai-kuo,GENG Shi-hua,BI Yan-shan.Overview on Error Correction Code Technologies for NAND Flash Memory[J].Computer and Modernization,2017,0(11):35. |
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| Authors: | PENG Fu-lai YU Zhi-lou CHEN Nai-kuo GENG Shi-hua BI Yan-shan |
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| Abstract: | This paper presented a review on the error correction code (ECC) technologies for NAND flash memory. Firstly, we introduced the internal structure and error mechanism of NAND flash. Then, we introduced the current four ECC technologies including Hamming code, RS code, BCH code and LDPC code and presented the research status. Lastly, the analysis and comparison among these four technologies were presented. |
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| Keywords: | error correction code NAND flash memory BCH code LDPC code |
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