Characteristics of In/sub 0.425/Al/sub 0.575/As-InxGa/sub 1-x/As metamorphic HEMTs with pseudomorphic and symmetrically graded channels |
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| Authors: | Wei-Chou Hsu Yeong-Jia Chen Ching-Sung Lee Tzong-Bin Wang Jun-Chin Huang Dong-Hai Huang Ke-Hua Su Yu-Shyan Lin Chang-Luen Wu |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan; |
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| Abstract: | In/sub 0.425/Al/sub 0.575/As-In/sub x/Ga/sub 1-x/As metamorphic high electron mobility transistors (MHEMTs) with two different channel designs, grown by molecular beam epitaxy (MBE) system, have been successfully investigated. Comprehensive dc and high-frequency characteristics, including the extrinsic transconductance, current driving capability, device linearity, pinch-off property, gate-voltage swing, breakdown performance, unity-gain cutoff frequency, max. oscillation frequency, output power, and power gain, etc., have been characterized and compared. In addition, complete parametric information of the small-signal device model has also been extracted and discussed for the pseudomorphic channel MHEMT (PC-MHEMT) and the V-shaped symmetrically graded channel MHEMT (SGC-MHEMT), respectively. |
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