| 一种基于SiGe BiCMOS的高速采样/保持电路 |
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| 引用本文： | 潘星,王永禄,张正平,张俊安. 一种基于SiGe BiCMOS的高速采样/保持电路[J]. 微电子学, 2008, 38(6) |
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| 作者姓名： | 潘星 王永禄 张正平 张俊安 |
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| 作者单位： | 1. 重庆邮电大学,重庆,400065;模拟集成电路国家级重点实验室,重庆,400060
2. 模拟集成电路国家级重点实验室,重庆,400060;中国电子科技集团公司,第二十四研究所,重庆,400060 |
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| 摘 要： | 设计了一种基于BiCMOS工艺的高速采样/保持电路,该工艺提供了180 nm的CMOS和75 GHz fT的SiGe HBT.差分交换式射极跟随器和低下垂输出缓冲器的结合,使电路具有更好的性能.在Cadence Spectre环境下进行仿真,当输入信号为968.75 MHz、Vpp为1 V的正弦波,采样速率为2 GSPS时,该采样/保持电路的SFDR达到62.2 dB,THD达到-59.5 dB,分辨率达到9位;在3.3 V电源电压下,电路功耗为20 mW.
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| 关 键 词： | 采样/保持电路 差分交换式射极跟随器 低下垂输出缓冲器 |
High-Speed Sample-and-Hold Circuit Based on SiGe BiCMOS Technology |
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| PAN Xing,WANG Yong-lu,ZHANG Zheng-ping,ZHANG Ju-nan. High-Speed Sample-and-Hold Circuit Based on SiGe BiCMOS Technology[J]. Microelectronics, 2008, 38(6) |
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| Authors: | PAN Xing WANG Yong-lu ZHANG Zheng-ping ZHANG Ju-nan |
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| Affiliation: | PAN Xing~(1,2) WANG Yonglu~(2,3) ZHANG Zhengping~(2,3) ZHANG Jun'an~(2,3) (1.Chongqing University of Posts , Telecommunications,Chongqing 400065,P.R.China,2.National Laboratory of Analog ICs,Chongqing 400060,3.Sichuan Institute of Solid State Circuits,China Electronics Technology Group Corp.,P.R.China) |
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| Abstract: | A high-speed sample-and-hold circuit was presented based on BiCMOS technology,which provides 180 nm CMOS transistors and SiGe HBTs with an f_T of 75 GHz.Differential switched emitter follower and low-droop output buffer were combined to improve the circuit performance.Simulated with Cadence Spectre,this sample-and-hold circuit achieves an SFDR of 62.2 dB,a THD of -59.5 dB and a resolution of 9 bits for 968.75 MHz sinusoidal input of 1 V(V_(pp))at 2 GHz sampling rate.And the circuit consumes 20 mW of power f... |
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| Keywords: | BiCMOS |
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