Secondary recrystallization in thin films of FCC metals under pulsed laser irradiation |
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| Authors: | M. I. Markevich |
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| Affiliation: | (1) Institute of Electronics, Belarussian Academy of Sciences, Logoiskii trakt 22, 220090 Minsk, Belarus |
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| Abstract: | Mathematical modeling was used to examine vacancy migration in Ag and Al films during pulsed laser annealing at different pulse durations and incident power densities. The results demonstrate that, during pulsed laser processing of fcc-metal films containing nonequilibrium initial vacancy concentrations (10-7 to 10-3), secondary recrystallization proceeds in the presence of a high vacancy concentration, accelerating grainboundary migration. |
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