氮含量对a-Si:H/a-SiN_x:H多层膜界面及光学性质的影响(英文) |
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引用本文: | 赵周英,刘湘娜,唐文国.氮含量对a-Si:H/a-SiN_x:H多层膜界面及光学性质的影响(英文)[J].固体电子学研究与进展,1989(4). |
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作者姓名: | 赵周英 刘湘娜 唐文国 |
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作者单位: | 南京大学物理系
(赵周英,刘湘娜),中国科学院上海技术物理研究所(唐文国) |
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摘 要: |
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Investigation into Nitrogen Content Influence on the Interface and Optical Properties of a-Si:H/a-SiN_x :H Multilayers |
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Abstract: | We have studied TV content influence in two ranges of x(R1.,R2) by Raman, PL, IR spectra on PCVD a-Si:H/a-SiNx:H samples with constant sublayer thickness and cycle number but whole range of x respectively. Raman shows that the FWHM of TO-like peaks increases with x in range R1 and so does the bond angle fluctuation. PL exhibits that the band tail width increases and the NR activation energy as well as the PL efficiency decrease? with x in R1, because of the increase of lattice strain introduced by structural mismatch at interfaces. The above parameters change towards the opposite direction in R2 with a turn at x=0.9, This might be caused by the structure change of a-SiNx into Si3N4 and the greatly increasing of N-H bonds in R2, which enhances the softness of the matrix and relaxes the lattice strain. |
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