基于GaN FETs的高频半桥谐振变换器分析与设计

随着Si材料半导体器件性能逐步达到瓶颈,宽禁带半导体器件(GaN、SiC)在诸多方面展现出了很好的性能,如低导通阻抗,小输入、输出电容等,这些特性使得GaN和SiC器件能够应用在更高的开关频率条件,从而提高系统的功率密度。针对基于GaN FETs构成的高频半桥谐振变换器进行设计,分析了高频条件下寄生电感参数对系统驱动电压及漏源极电压的影响,同时分析了高频条件下系统电压电流测量所需注意的事项及影响因素,为高频条件下GaN FETs的应用提供一定的帮助。

Analysis and Design of High Frequency Half-bridge Resonant Converter Based on GaN FETs

With the fast development of Si material semiconductor devices, they have almost reached the characteristics limitation. Wideband semiconductor devices, such as GaN, SiC, perform excellent properties than Si material, on low on-resistance, small input and output capacitors. These characteristics make the GaN and SiC devices operate in much higher frequencies, then the power density of the system can be improved. In this paper, a high frequency half-bridge resonant converter is based analysis and design on GaN FETs. Based on the topology, the switching losses and parasitic inductor effects are detailed analyzed. Some cautions and influence factors are also depicted to help measure the voltage and current in high frequency conditions.