Growth of direct bandgap GalnP quantum dots on GaP substrates |
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Authors: | Jong-Won Lee Alfred T Schremer Dan Fekete James R Shealy Joseph M Ballantyne |
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Affiliation: | (1) Phillips Hall, School of Electrical Engineering, Cornell University, 14853 Ithaca, NY |
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Abstract: | GaInP has a direct bandgap for In concentrations higher than approximately 30%, and the band-lineup between GaInP and GaP
is type-II for In concentrations less than 60%. Therefore, in order to use GaInP as the active light-emitting layer in an
optoelectronic device grown on GaP, the strain induced by the lattice mismatch between GaInP and GaP has to be somehow managed
such that formation of crystal defects is suppressed. One method is to grow the layer thinner than the critical thickness.
Another method that recently received much attention is to grow strain-induced Stranski-Krastanov islands (sometimes referred
to as self-assembled quantum dots). Small droplets of highly latticmismatched materials have been embedded into single crystals
without generating defects such as threading dislocations and stacking faults using this method. We have grown a series of
GaInP/GaP layers by metalorganic chemical vapor deposition and have studied the light emission from them. Ordered GaInP islands
were found to be responsible for the light emission. We present the light emission characteristics of these ordered GaInP/GaP
islands, and their dependence on various growth parameters. |
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Keywords: | Epitaxial growth GaInP GaP substrates metalorganic chemical vapor deposition (MOCVD) semiconductor quantum dots |
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