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电沉积法制备纳米SnO_2薄膜
引用本文:熊利芝,何则强,麻明友,肖卓炳,吴显明,黄可龙.电沉积法制备纳米SnO_2薄膜[J].精细化工,2006,23(1):20-24.
作者姓名:熊利芝  何则强  麻明友  肖卓炳  吴显明  黄可龙
作者单位:1. 吉首大学,化学化工学院,湖南,吉首,416000
2. 吉首大学,化学化工学院,湖南,吉首,416000;中南大学,化学化工学院,湖南,长沙,410083
3. 中南大学,化学化工学院,湖南,长沙,410083
基金项目:中国科学院资助项目;湖南省教育厅青年基金;中国博士后科学基金;中南大学校科研和教改项目
摘    要:采用一种电沉积法室温下制备纳米SnO2薄膜。经研究得到了电沉积SnO2薄膜的最佳工艺条件:电流密度、电沉积时间、主盐浓度、游离酸浓度分别为i=8 mA.cm-2,t=120 m in,c(SnC l2)=0.02 mol/L,c(HNO3)=0.03 mol/L。用X射线衍射、红外光谱和扫描电镜、透射电镜等对薄膜的物相和微观结构、表面形貌等进行了研究。结果表明,室温下干燥得到的薄膜由SnO2.xH2O组成,但经过400℃热处理后,逐渐转变成结晶较为完整的四方结构SnO2薄膜,薄膜的表面较为平整、呈多孔状,薄膜粒径大小为8~20 nm。

关 键 词:SnO2  薄膜  电沉积  微观结构
文章编号:1003-5214(2006)01-0020-05
收稿时间:2005-07-22
修稿时间:2005-07-222005-08-11

Preparation of Nano-SnO2 Thin Film by Electrodeposition
XIONG Li-zhi,HE Ze-qiang,MA Ming-you,XIAO Zhuo-bing,WU Xian-ming,HUANG Ke-long.Preparation of Nano-SnO2 Thin Film by Electrodeposition[J].Fine Chemicals,2006,23(1):20-24.
Authors:XIONG Li-zhi  HE Ze-qiang  MA Ming-you  XIAO Zhuo-bing  WU Xian-ming  HUANG Ke-long
Abstract:A process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed.The optimal preparation technology to obtain SnO_2 thin films was proposed as current density i=8 mA·cm~(2),time of deposition t=120 min,c(SnCl_2)=0.02 mol/L and c(HNO_3)=0.03 mol/L.The phase identification,microstructure and morphology of the thin films were investigated by XRD,FTIR,SEM and TEM.The as-deposited thin film composed of SnO_2·xH_2O was formed on drying at room temperature.Nanocrystalline SnO_2 thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and uniform porous surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h.
Keywords:SnO2
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