Optimization of ohmic contacts to <Emphasis Type="Italic">n</Emphasis>-GaAs layers of heterobipolar nanoheterostructures |
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Authors: | V I Egorkin V E Zemlyakov A V Nezhentsev V I Garmash |
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Affiliation: | 1.National Research University of Electronic Technology (MIET),Zelenograd,Russia |
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Abstract: | This paper investigates ohmic contacts to n-GaAs layers of the heterobipolar nanoheterostructures obtained through electron-beam evaporation of Ge, Au, Ni, and Au layer-by-layer. The effect of the firing time and temperature on the contact resistance is considered. Based on the analysis of the characteristics of the ohmic contacts, a firing installation of a special design and a firing technique are developed. The technique ensures the minimum contact resistance for the minimum size of a transition layer, satisfactory morphology, and even edges of the contacts. |
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