Modeling SiO2 leakage currents caused by electrical overloads |
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| Authors: | V. A. Polunin |
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| Affiliation: | 1.National Research Nuclear University MEPhI,Moscow,Russia;2.AO Experimental Research and Production Association of Specialized Electronic Systems,Moscow,Russia |
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| Abstract: | A two-component model for the formation of leakage currents in SiO2 in a strong electric field is proposed. In the model, agreement is found between the theoretical and experimental values of leakage currents in a wide range of electric field strength and the size of charge transferred. |
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