Atomic simulation of energetic fluorine interacting with Si(0 0 1) |
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Authors: | F Gou Qiu Qian JY Tang |
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Affiliation: | a School of Electronic Science and Information Technology, Guizhou University, 550025 Guizhou Province, PR China b School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang, Sichuan 621010, PR China c FOM Institute for Plasma Physics Rijnhuizen, Euratom-FOM Association, 3439 MN Nieuwegein, The Netherlands |
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Abstract: | In this study, Molecular dynamics simulations were performed to investigate F continuously bombarding silicon surfaces at normal incidence and room temperature. The simulated results show that with increasing incident energy and temperature, the etch yield of Si atoms increases, which is in good qualitative agreement with experiments. Accompanying reaching the steady-state F uptake and Si etching, a steady-state SiFx (x = 1-4) reactive layer is formed whose thickness increases with increasing incident energy. In the reaction layer, SiF species are dominant and SiF3 species decrease with increasing incident energy. |
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Keywords: | 52 65 Yy 81 65 Cf 52 77 Dq |
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