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Oscillating electric field domains in GaAs/AlAs superlattices |
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| Authors: | J. Kastrup H. T. Grahn K. Ploog R. Merlin |
| Affiliation: | a Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin, Germany b The Harrison M. Randall Laboratory of Physics, The University of Michigan, Ann Arbor, Michigan 48109-1120, U.S.A. |
| Abstract: | We report on the observation of self-sustained oscillations associated with electric-field domains in GaAs/AlAs superlattices. The samples are n-doped superlattices embedded between n+-contacts. The observed oscillation frequencies between 700 kHz and 100 MHz depend strongly on the coupling strength between adjacent wells. Monitoring the oscillations with time-resolved photoluminescence spectroscopy indicates that the current oscillations are due to the movement of a charge accumulation layer at the domain boundary. |
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