Millimeter-wave low-noise and high-power metamorphic HEMTamplifiers and devices on GaAs substrates |
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Authors: | Whelan CS Marsh PF Hoke WE McTaggart RA Lyman PS Lemonias PJ Lardizabal SM Leoni RE III Lichwala SJ Kazior TE |
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Affiliation: | Raytheon Co., Andover, MA; |
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Abstract: | This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise figure with 11.8 dB of associated gain at 26 GHz. Using this MHEMT technology, two and three-stage Ka-band low-noise amplifiers (LNAs) have demonstrated <1.4-dB noise figure with 16 dB of gain and <1.7 with 26 dB of gain, respectively. The 32% In MHEMT device has overcome the <3.5-V drain bias limitation of other MHEMT power devices, showing a power density of 650 mW/mm at 35 GHz, with Vds=6 V |
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