| Ku波段10W功率PHEMT |
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| 引用本文： | 陈堂胜,杨立杰,周焕文,李拂晓,陈效建.Ku波段10W功率PHEMT[J].固体电子学研究与进展,2003,23(1):42-44,50. |
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| 作者姓名： | 陈堂胜 杨立杰 周焕文 李拂晓 陈效建 |
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| 作者单位： | 南京电子器件研究所,210016 |
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| 摘 要： | 报告了研制的 9.6mm栅宽双δ-掺杂功率 PHEMT,在 fo=1 1 .2 GHz、Vds=8.5 V时该器件输出功率3 7.2 8d Bm,功率增益 9.5 d B,功率附加效率 44.7% ,在 Vds=5～ 9V的范围内 ,该器件的功率附加效率均大于42 % ,两芯片合成 ,在 1 0 .5～ 1 1 .3 GHz范围内 ,输出功率大于 3 9.92 d Bm,最大功率达到 40 .3 7d Bm,功率增益大于 9.9d B,典型的功率附加效率 40 %。
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| 关 键 词： | 内匹配 大功率 赝配高电子迁移率晶体管 |
| 文章编号： | 1000-3819(2003)01-042-03 |
Ku-band 10 W Power PHEMT |
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| CHEN Tangsheng,YANG Lijie,ZHOU Huanwen,LI Fuxiao,CHEN Xiaojian.Ku-band 10 W Power PHEMT[J].Research & Progress of Solid State Electronics,2003,23(1):42-44,50. |
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| Authors: | CHEN Tangsheng YANG Lijie ZHOU Huanwen LI Fuxiao CHEN Xiaojian |
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| Abstract: | The developed double δ-doped power PHEMT with 9.6 mm gate periphery delivers 37.28 dBm output power with 9.5 dB power gain and 44.7% power added efficiency (PAE) at 11.2 GHz with V ds =8.5 V. The device works with PAE more than 42% when the V ds varies between 5～9 V. The combination of two chips demonstrates output power more than 39.92 dBm with more than 9.9 dB power gain and 40% typical PAE across the band of 10.5～11.3 GHz and the highest output power reaches 40.37 dBm. |
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| Keywords: | internally matching high power power PHEMT |
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