Diffused planar InP bipolar transistor with a cadmium oxide film emitter |
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| Authors: | Su L.M. Grote N. Schmitt F. |
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| Affiliation: | Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, Berlin, West Germany; |
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| Abstract: | A novel bipolar InP transistor is demonstrated which comprises a Zn-diffused base and a transparent conductor widegap emitter made of sputtered cadmium oxide. Preliminary current gain was about 10. Owing to its less demanding planar technology the device is assessed to be promising for monolithic integration. |
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