首页 | 本学科首页   官方微博 | 高级检索  
     

ZnO/PS异质结的光学和电学性质
引用本文:赵波,李清山,张宁,陈达,郑学刚.ZnO/PS异质结的光学和电学性质[J].半导体学报,2006,27(7):1217-1220.
作者姓名:赵波  李清山  张宁  陈达  郑学刚
作者单位:曲阜师范大学物理工程学院,曲阜 273165;曲阜师范大学物理工程学院,曲阜 273165;曲阜师范大学物理工程学院,曲阜 273165;曲阜师范大学物理工程学院,曲阜 273165;曲阜师范大学物理工程学院,曲阜 273165
摘    要:用脉冲激光沉积的方法在多孔硅(PS)衬底上沉积ZnO薄膜,在室温下测量了ZnO/PS异质结的结构及光学和电学性质.X射线衍射仪和扫描电子显微镜测量表明,制备的ZnO薄膜具有一定的c轴取向,但薄膜存在较多缺陷.光致发光谱显示,PS的发光与ZnO的发光相叠加,呈现白光发射.对异质结I-V特性曲线的测量表明,异质结呈现出与普通二极管不同的整流特性,其反向电流不饱和,据此提出了能带模型.

关 键 词:白光发射  多孔硅  ZnO光致发光  能带模型  异质结  光学和电学性质  Electrical  Properties  Optical  能带模型  反向电流  的整流特性  普通二极管  特性曲线  光发射  叠加  光致发光谱  显示  缺陷  存在  取向  测量表  电子显微镜  扫描  衍射仪
文章编号:0253-4177(2006)07-1217-04
收稿时间:12 4 2005 12:00AM
修稿时间:01 19 2006 12:00AM

Optical and Electrical Properties of ZnO/PS Heterostructure
Zhao Bo,Li Qingshan,Zhang Ning,Chen Da and Zheng Xuegang.Optical and Electrical Properties of ZnO/PS Heterostructure[J].Chinese Journal of Semiconductors,2006,27(7):1217-1220.
Authors:Zhao Bo  Li Qingshan  Zhang Ning  Chen Da and Zheng Xuegang
Affiliation:Department of Physics,Qufu Normal University,Qufu 273165,China;Department of Physics,Qufu Normal University,Qufu 273165,China;Department of Physics,Qufu Normal University,Qufu 273165,China;Department of Physics,Qufu Normal University,Qufu 273165,China;Department of Physics,Qufu Normal University,Qufu 273165,China
Abstract:The optical and electrical properties of ZnO/porous Si (PS) heterostructure are studied.The PS sample is formed by the anodization of a single-crystal Si wafer.ZnO films are then deposited on the PS substrate by pulsed laser deposition.White light formed by combining the red emission from the PS layers with the blue-green emission from the ZnO films is obtained.Due to the roughness of the PS surface,some cracks appear in the ZnO films,which can be seen from the SEM spectra.The I-V characteristics of the ZnO/PS heterostructure are different from those of the common diode,whose reverse current is not saturated.Based on the I-V characteristics,an energy band diagram is proposed.
Keywords:white light emission  porous silicon  ZnO  photoluminescence  energy band diagram
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号