| 四端硅压力传感器输出电压的解析模型 |
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| 引用本文： | 陆生礼,柯导明,陈军宁,孟坚,朱德智.四端硅压力传感器输出电压的解析模型[J].电子学报,2005,33(5):912-914. |
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| 作者姓名： | 陆生礼 柯导明 陈军宁 孟坚 朱德智 |
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| 作者单位： | 1. 东南大学国家ASIC工程中心,浙江南京,210096;2. 安徽大学电子系,安徽合肥 230039 |
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| 基金项目： | 国家高技术研究发展计划(863计划)，安徽省教育厅科研项目 |
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| 摘 要： | 本文用摄动法求解了横向压阻效应四端硅压力传感器输出电压的两维偏微分方程,导出了器件的输出电压与器件尺寸的关系;证明了随应力而变的输出电压最大值在器件横向L/2处,并给出了最大输出电压的解析表达式.这些解析公式得到的计算结果,都和数值解、实验数据相符合,说明了得到的公式具有高的精度.用所给的解析表达式可以很方便地进行器件设计和模拟.
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| 关 键 词： | 四端硅压力传感器 正则摄动 解析表达式 |
| 文章编号： | 0372-2112(2005)05-0912-03 |
| 收稿时间： | 2004-02-23 |
An Analysis Model for the Output Voltage of Four-Terminal Silicon Pressure Transducers |
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| LU Sheng-li,KE Dao-ming,CHEN Jun-ning,MENG Jian,Zhu De-zhi.An Analysis Model for the Output Voltage of Four-Terminal Silicon Pressure Transducers[J].Acta Electronica Sinica,2005,33(5):912-914. |
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| Authors: | LU Sheng-li KE Dao-ming CHEN Jun-ning MENG Jian Zhu De-zhi |
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| Affiliation: | 1. National ASIC Engineering Research Center,Sotheast University,Nanjing,Jiangsu 210096,China;2. Department of Electronics Engineering,Anhui University,Hefei,Anhui 230039,China |
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| Abstract: | The paper resolved a two-dimensional partial differential equation of transverse piezoresistive effect transducers with a method of perturbation.A relationship between the output voltage and device size has been gotten.We also verify that the maximum output voltage is located at middle point of output terminal.An expression of the maximum output voltage has been given.The calculation results based on the expressions are fit to numerical and experimental values of devices.It shows that the analysis model we have gotten is right.These expressions based on the paper can be used in design and simulation of four-terminal piezoresistive pressure transducers. |
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| Keywords: | four-terminal silicon pressure transducer normal perturbation analysis expressions |
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