| 摘 要： | The diffusion of Zn into GaAs at low temperature has been investigated.The experiments arecarried out in an evacuated and sealed quartz ampoule using ZnAs_2 as the source of Zn.The relation among the junction depth(X_j),the time(t)and the temperature(T)of diffusion hasbeen investigated.It is found that the sheet resistance(R_s)of diffusion layer increases as X_j decreases.The surface concentration(C_s)decreases as 1/T increases,and mobility(μ)decreases as C_s increasesThe C_s versus 1/(X_j,R_s)are plotted,the results are that C_s increases as 1/(X_j,R_s)increases.This is asimple method for determining C_s of the multiple GaAs/GaAlAs epitaxial layer.The mechanism ofZn diffusion in GaAs and InP is discussed.This process has been applied to fabricate GaAs/GaAlAsdouble heterojunction light emitting diodes and an output power of 2—4mW is obtained,the seriesresistance is 3—5Ω.
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