High performance sub-0.25 μm devices using ultrathinoxide-nitride-oxide gate dielectric formed with low pressure oxidationand chemical vapor deposition |
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Authors: | Ma Y. Lee J.L. Carroll M.S. Lee K.H. |
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Affiliation: | Bell Lab., Lucent Technol., Orlando, FL; |
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Abstract: | An ultra-thin, high reliability oxide-nitride-oxide (ONO) gate dielectric was formed using low pressure oxidation and chemical vapor deposition. A sub-0.25 μm device with high performance was fabricated for which the gate dielectric reliability was studied using both Fowler-Nordheim tunneling stress and hot carrier aging. The results from both techniques demonstrate that the device lifetime is longer than 100 years. Auger spectroscopy shows that there is about 9 at.% nitrogen at the SiO2/Si interface. However, no transconductance degradation is observed |
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