| 二氧化钛/多孔硅/硅异质结的表面光电压谱 |
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| 引用本文： | 李旦振,刘平,付贤智.二氧化钛/多孔硅/硅异质结的表面光电压谱[J].材料研究学报,2000,14(5):558-560. |
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| 作者姓名： | 李旦振 刘平 付贤智 |
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| 作者单位： | 福州大学，福州大学，福州大学光催化研究所!福州市 350002 |
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| 基金项目： | 国家自然科学基金资助项目!29843003，福建省自然科学基金资助项目!B9820001，国家产业化前期关键技术开发资助项目! |
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| 摘 要： | 首次在多孔硅 （ＰＳ）的表面镀纳米二氧化钛 （ＴｉＯ２）薄膜，表面光电压谱 （ＳＰＳ）测试表明：镀膜后多孔硅的光电压信号增强约２～３个数量级，其原因可能是双异质结构ＴｉＯ２／ＰＳ／ｐ－Ｓｉ能有效地吸收近红外一直到紫外光，并且近本征的多孔硅自建电场增大，使光生电子－空穴对能有效地分离；ＰＳ／ｐ－Ｓｉ之间的势垒差产生的阻止少于向电极扩散的背向电场，也能有效地增强光生电压．
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| 关 键 词： | 表面光电压谱 多孔硅 二氧化钛 异质结 |
| 文章编号： | 1005-3093(2000)05-0558-03 |
| 修稿时间： | 1999年10月20日 |
SURFACE PHOTOVOLTAIC SPECTROSCOPY OF HETEROSTRUCTURES OF TiO2/PS/p-Si |
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| LI Danzhen,LIU Ping,FU Xianzhi.SURFACE PHOTOVOLTAIC SPECTROSCOPY OF HETEROSTRUCTURES OF TiO2/PS/p-Si[J].Chinese Journal of Materials Research,2000,14(5):558-560. |
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| Authors: | LI Danzhen LIU Ping FU Xianzhi |
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| Abstract: | A quantum--sized thin film of TiO2 was coated on the surface of a porous silicon substrate. The results obtained by the surface photovoltage spectroscope (SPS) showed that the photovoltage of porous silicon (PS) was enhanced by two or three orders of magnitude. The enhancement may be attributed to the efficient absorption spectrum from near infrared till ultraviolet light of the double heterojunctions of TiO2/PS/p-Si and the effective separation of the photoproduced electron--hole pairs due to the increment of the built--in electric field of the quasi--intrinsic porous silicon. Moreover, the back electric field generated by the potential difference between PS and P--Si may resist the diffusion of minority carrier toward the electrode, leading also effectively to the enhancement of the photovoltage. |
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| Keywords: | surface photovoltaic spectroscopy porous silicon(PS) TiO2 heterojunctions |
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