基片温度对Ni81Fe19薄膜结构和各向异性磁电阻的影响

利用磁控溅射方法制备了一系列Ta(x)/Ni81Fe19(100nm)/Ta(3nm)磁性薄膜。着重研究基片温度、缓冲层厚度对薄膜结构和各向异性磁电阻的影响。利用X射线衍射仪分析了薄膜结构、晶粒取向;用四探针法测量了薄膜的电阻率和各向异性磁电阻。结果表明,基片温度对薄膜的各向异性磁电阻及饱和场有显著影响,随着基片温度的升高,薄膜各向异性磁电阻随之增大,饱和场则相反。基片温度在400℃时制备的Ni81Fe19薄膜具有较大的各向异性磁电阻比和较低的磁化饱和场,薄膜最大各向异性磁电阻比为4.23%,最低磁化饱和场为739.67A/m;随着缓冲层厚度的增加,坡莫合金薄膜的AMR值先变大后减小,在x=5nm时达到最大值。

Effects of substrate temperature on the structure and anisotropic magnetoresistance of Ni81Fe19 thin films

A series of Ta(x)/Ni81Fe19(100nm)/Ta(3nm) Ni81Fe19 magnetic thin films were prepared by magnetron sputtering method.Effects of substrate temperature and buffer layer thickness on the structure and anisotropic magnetoresistance(AMR) of Ni81Fe19 thin films were investigated.The film structure and grain orientation were analyzed by X-ray diffraction;resistivity and AMR value of Ni81Fe19 thin films were measured by Four-point probe technology.The results showed that substrate temperature has significant effect on anisotropic magnetoresistance and saturation magnetization field of the film.With the rise of substrate temperature,AMR value increases and saturation magnetization field reduces.The Ni81Fe19 films prepared at substrate temperatures of 400℃ shows higher AMR value and lower saturation magnetization field.The highest AMR value is 4.23% and the lowest saturation magnetizing field is 739.67A/m.With increase of buffer layer thickness AMR value increases first but then decreases,reaching the maximum when x is 5nm.