| 一种基于锡锑氧化物的透明PN结及整流特性 |
| |
| 引用本文： | 季振国,周荣福,毛启楠,霍丽娟,曹虹.一种基于锡锑氧化物的透明PN结及整流特性[J].无机材料学报,2009,24(6):1259-1262. |
| |
| 作者姓名： | 季振国 周荣福 毛启楠 霍丽娟 曹虹 |
| |
| 作者单位： | (1. 杭州电子科技大学 电子信息学院， 杭州 310018； 2. 浙江大学 硅材料国家重点实验室， 杭州 310027) |
| |
| 基金项目： | 国家自然科学基金，Science and Technology Project of Zhejiang Province |
| |
| 摘 要： | 利用反应磁控溅射法制备了半导体锡锑氧化物薄膜 (TAO). 根据霍尔效应测试结果，当Sn/Sb 原子比处于0.22~0.33范围内时，TAO薄膜是p型导电的，在此范围之外，TAO薄膜是n型导电的. 光学带隙测量结果表明,不同Sn/Sb比的TAO薄膜的禁带宽度基本相同(~3.9eV).构造了一个全透明的PN结，其中n区为Sn/Sb原子比为0.5的TAO薄膜， p区为Sn/Sb原子比为0.33的TAO薄膜.n区TAO的电极用铟锡氧化物（ITO），p区TAO的电极用Cu薄膜.实验结果表明，由于两种导电类型的TAO薄膜具有相同的禁带宽度，上述透明PN结构具有典型的准同质PN结的整流特性.
|
| 关 键 词： | 透明半导体薄膜 锡锑氧化物 PN结 |
| 收稿时间： | 2009-3-31 |
| 修稿时间： | 2009-6-17 |
A Transparent PN Junction Based on Tin-antimony Oxide Films |
| |
| JI Zhen-Guo,ZHOU Rong-Fu,MAO Qi-Nan,HUO Li-Juan,CAO Hong.A Transparent PN Junction Based on Tin-antimony Oxide Films[J].Journal of Inorganic Materials,2009,24(6):1259-1262. |
| |
| Authors: | JI Zhen-Guo ZHOU Rong-Fu MAO Qi-Nan HUO Li-Juan CAO Hong |
| |
| Affiliation: | (1. Institute of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, China; 2. State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou 310027, China) |
| |
| Abstract: | Transparent and semiconductive tin-antimony oxide (TAO) films were fabricated by reactive DC magnetron sputtering. According to the results of Hall effect measurement, TAO films are p-type for Sn/Sb atomic ratio in the range of 0.22-0.33, while TAO films with Sn/Sb atomic ratio out of this range are n-type. Optical band-gap measurement results show that the band-gap of all TAO films with various Sn/Sb ratios is almost identical (～3.91eV). Finally, a PN junction based on n-TAO and p-TAO was fabricated using ITO as the electrode for n-TAO and a thin layer of Cu as the electrode for p-TCO. It shows typical rectifying characteristics of a homo-junction diode since both types of TAO films have almost the same band-gap values. |
| |
| Keywords: | transparent semiconductive films antimony-tin oxide PN junction |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《无机材料学报》浏览原始摘要信息 |
|
点击此处可从《无机材料学报》下载全文 |
