Preparation and microwave dielectric properties of 3ZnO·B2O3 ceramics with low sintering temperature |
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| Authors: | Yunxiang HuDongmei Wei Qiuyun Fu Jun ZhaoDongxiang Zhou |
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| Affiliation: | a Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
b State Key Laboratory of Material Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, China |
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| Abstract: | The preparation and dielectric properties of 3ZnO·B2O3 ceramics were investigated. Dense 3ZnO·B2O3 ceramics were obtained as sintered in the temperature range from 950 to 1000 °C for 3 h. The X-ray diffraction showed that the obtained ceramics were of a monoclinic 3ZnO·B2O3 structure. The ceramic specimens fired at 955 °C for 1 h exhibited excellent microwave dielectric properties: ?r ∼ 6.9, Q × f ∼ 20,647 GHz (@6.35 GHz), and τf ∼ −80 ppm/°C. The dependences of relative density, ?r, and Q × f of ceramics sintered at 955 °C on sintering soaking time showed that they all reached their plateaus as the soaking time was up to 60 min. Meanwhile, 3ZnO·B2O3 ceramics had no reaction with silver during cofiring, indicating it is a potential candidate for low-temperature cofired ceramic (LTCC) substrate. |
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| Keywords: | Sintering Microstructure-final Dielectric properties 3ZnO· B2O3 Substrates |
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